A.A. Molodyk, M.A. Novozhilov, I.E. Graboy, O.Yu. Gorbenko, I.E. Korsakov, A.R. Kaul
The Electrochemical Society Proceedings Volume, v. 97-25, p.1152-1159 (1997)
ABSTRACT. Oriented oxide heterostructures including substrate, buffer and metal- conducting layers were prepared by band flash evaporation MOCVD, each in a continuous deposition run, and characterized by XRD, SNMS, HREM, measurements of the electric properties. Epitaxial heterostructures with buffer layers improving the structural match in the systems were obtained: (001)CeO2/(001)YSZ/(1-102)Al2O3, (001)CaRuO3/(001)PrOx/(001)YSZ, (001)CaRuO3/(001)CeO2/(001)YSZ, (001)CaRuO3/(001)CeO2/(1-102)Al2O3. Oriented ferroelectric PbTiO3 films were deposited on CaRuO3 electrode layers obtained. The properties of the multilayered films deposited in a continuous run and at several consequent attempts, with and without buffering, are compared.